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Product Introduction

IPB60R099C6ATMA1

Part Number
IPB60R099C6ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 600V 37.9A TO263
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
CoolMOS™
Quantity
1197pcs Stock Available.

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Product Specifications

Part Number IPB60R099C6ATMA1
Datasheet IPB60R099C6ATMA1 datasheet
Description MOSFET N-CH 600V 37.9A TO263
Manufacturer Infineon Technologies
Series CoolMOS™
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99 mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs 119nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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