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| Part Number | APTM20DHM10G | 
| Datasheet | APTM20DHM10G datasheet | 
| Description | MOSFET 2N-CH 200V 175A SP6 | 
| Manufacturer | Microsemi Corporation | 
| Series | - | 
| Part Status | Obsolete | 
| FET Type | 2 N-Channel (Dual) Asymmetrical | 
| FET Feature | Standard | 
| Drain to Source Voltage (Vdss) | 200V | 
| Current - Continuous Drain (Id) @ 25°C | 175A | 
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 87.5A, 10V | 
| Vgs(th) (Max) @ Id | 5V @ 5mA | 
| Gate Charge (Qg) (Max) @ Vgs | 224nC @ 10V | 
| Input Capacitance (Ciss) (Max) @ Vds | 13700pF @ 25V | 
| Power - Max | 694W | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Chassis Mount | 
| Package / Case | SP6 | 
| Supplier Device Package | SP6 |