Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APT29F100B2
Product Introduction
APT29F100B2
- Part Number
- APT29F100B2
- Manufacturer/Brand
- Microsemi Corporation
- Description
- MOSFET N-CH 1000V 30A T-MAX
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- POWER MOS 8™
- Quantity
- 218pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | APT29F100B2 |
| Datasheet | APT29F100B2 datasheet |
| Description | MOSFET N-CH 1000V 30A T-MAX |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 440 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |
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