Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / RGTH00TS65GC11
Part Number | RGTH00TS65GC11 |
Datasheet | RGTH00TS65GC11 datasheet |
Description | IGBT 650V 85A 277W TO-247N |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 85A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
Power - Max | 277W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 94nC |
Td (on/off) @ 25°C | 39ns/143ns |
Test Condition | 400V, 50A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247N |