Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQM120N06-3M5L_GE3
Part Number | SQM120N06-3M5L_GE3 |
Datasheet | SQM120N06-3M5L_GE3 datasheet |
Description | MOSFET N-CH 60V 120A TO263 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |