Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK11P65W,RQ
Part Number | TK11P65W,RQ |
Datasheet | TK11P65W,RQ datasheet |
Description | MOSFET N-CH 650V 11.1A DPAK-0S |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 300V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |