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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCD9N60NTM
Part Number | FCD9N60NTM |
Datasheet | FCD9N60NTM datasheet |
Description | MOSFET N-CH 600V 9A DPAK |
Manufacturer | ON Semiconductor |
Series | SupreMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 385 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17.8nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 92.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |