Home / Products / Integrated Circuits (ICs) / Memory / GD5F2GQ4UEYIGR

Product Introduction

GD5F2GQ4UEYIGR

Part Number
GD5F2GQ4UEYIGR
Manufacturer/Brand
GigaDevice Semiconductor (HK) Limited
Description
SPI NAND FLASH
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
6pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number GD5F2GQ4UEYIGR
Datasheet GD5F2GQ4UEYIGR datasheet
Description SPI NAND FLASH
Manufacturer GigaDevice Semiconductor (HK) Limited
Series -
Part Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gb (256M x 8)
Clock Frequency 120MHz
Write Cycle Time - Word, Page 700µs
Access Time -
Memory Interface SPI - Quad I/O
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (6x8)

Latest Products for Memory

71016S12PHG

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II

71016S12PHG8

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II

71016S15PHG8

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II

71016S15PHGI8

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II

71016S20PHG

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II

71016S20PHG8

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 44TSOP II