Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI8902EDB-T2-E1
Part Number | SI8902EDB-T2-E1 |
Datasheet | SI8902EDB-T2-E1 datasheet |
Description | MOSFET 2N-CH 20V 3.9A 6-MFP |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 1V @ 980µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-MICRO FOOT®CSP |
Supplier Device Package | 6-Micro Foot™ (2.36x1.56) |