Home / Products / Integrated Circuits (ICs) / Memory / MT29RZ4B2DZZHGSK-18 W.80E

Product Introduction

MT29RZ4B2DZZHGSK-18 W.80E

Part Number
MT29RZ4B2DZZHGSK-18 W.80E
Manufacturer/Brand
Micron Technology Inc.
Description
IC FLASH RAM 4G PARALLEL 533MHZ
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
1239pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number MT29RZ4B2DZZHGSK-18 W.80E
Datasheet MT29RZ4B2DZZHGSK-18 W.80E datasheet
Description IC FLASH RAM 4G PARALLEL 533MHZ
Manufacturer Micron Technology Inc.
Series -
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH, RAM
Technology FLASH - NAND, DRAM - LPDDR2
Memory Size 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Clock Frequency 533MHz
Write Cycle Time - Word, Page -
Access Time -
Memory Interface Parallel
Voltage - Supply 1.8V
Operating Temperature -25°C ~ 85°C (TA)
Mounting Type -
Package / Case -
Supplier Device Package -

Latest Products for Memory

MT29F64G08CBCGBSX-37BES:G TR

Micron Technology Inc.

IC FLASH 64G PARALLEL 167MHZ

MT29F64G08CBCGBWP-10ES:G TR

Micron Technology Inc.

IC FLASH 64G PARALLEL 100MHZ

MT29F64G08CBCGBWP-B:G

Micron Technology Inc.

IC FLASH 64G PARALLEL TSOP

MT29F64G08CBCGBWP-B:G TR

Micron Technology Inc.

IC FLASH 64G PARALLEL TSOP

MT29F64G08CBCGBWP-BES:G

Micron Technology Inc.

IC FLASH 64G PARALLEL TSOP

MT29F64G08CBCGBWP-BES:G TR

Micron Technology Inc.

IC FLASH 64G PARALLEL TSOP