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Product Introduction

MT3S111P(TE12L,F)

Part Number
MT3S111P(TE12L,F)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Category
Transistors - Bipolar (BJT) - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
7177pcs Stock Available.

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Product Specifications

Part Number MT3S111P(TE12L,F)
Datasheet MT3S111P(TE12L,F) datasheet
Description RF TRANS NPN 6V 8GHZ PW-MINI
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Gain 10.5dB
Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI

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