Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT50GP60B2DQ2G
Product Introduction
APT50GP60B2DQ2G
- Part Number
- APT50GP60B2DQ2G
- Manufacturer/Brand
- Microsemi Corporation
- Description
- IGBT 600V 150A 625W TMAX
- Category
- Transistors - IGBTs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- POWER MOS 7®
- Quantity
- 445pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | APT50GP60B2DQ2G |
| Datasheet | APT50GP60B2DQ2G datasheet |
| Description | IGBT 600V 150A 625W TMAX |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 150A |
| Current - Collector Pulsed (Icm) | 190A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Power - Max | 625W |
| Switching Energy | 465µJ (on), 635µJ (off) |
| Input Type | Standard |
| Gate Charge | 165nC |
| Td (on/off) @ 25°C | 19ns/85ns |
| Test Condition | 400V, 50A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
Latest Products for Transistors - IGBTs - Single
Related Products
- FID35-06C
- FID36-06D
- FIO50-12BD
- GT50J121(Q)
- GT60N321(Q)
- HGT1S20N36G3VL
- HGT1S2N120CN
- HGTP7N60A4-F102
- IEWS20R5135IPBXKMA1
- IHW30N120R5XKSA1
- IHW30N135R5XKSA1
- IHW40N120R5XKSA1
- IHW40N135R5XKSA1
- IHY15N120R3XKSA1
- IHY20N120R3XKSA1
- IHY20N135R3XKSA1
- IHY30N160R2XKSA1
- IKFW50N60ETXKSA1
- IKFW75N60ETXKSA1
- IKFW90N60EH3XKSA1
- IRG4BAC50W-S
- IRG4BAC50W-SPBF
- IRG4CC50UB
- IRG4RC10SDTRPBFBTMA1
- IRG7CH11K10EF
- IRG7CH20K10EF
- IRG7CH23K10EF
- IRG7CH28UED
- IRG7CH28UEF
- IRG7CH35UED
- IRG7CH35UEF
- IRG7CH42UED
- IRG7CH42UEF
- IRG7CH46UED
- IRG7CH46UEF
- IRG7CH50UED
- IRG7CH50UEF
- IRG7CH73K10EF
- IRG7CH73K10EF-R
- IRG7CH73UED-R