Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / AIHD06N60RFATMA1
Part Number | AIHD06N60RFATMA1 |
Datasheet | AIHD06N60RFATMA1 datasheet |
Description | IC DISCRETE 600V TO252-3 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Current - Collector Pulsed (Icm) | 18A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
Power - Max | 100W |
Switching Energy | 90µJ (on), 90µJ (off) |
Input Type | Standard |
Gate Charge | 48nC |
Td (on/off) @ 25°C | 8ns/105ns |
Test Condition | 400V, 6A, 23 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3-313 |