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Product Introduction

GP1M009A090N

Part Number
GP1M009A090N
Manufacturer/Brand
Global Power Technologies Group
Description
MOSFET N-CH 900V 9.5A TO3PN
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4514pcs Stock Available.

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Product Specifications

Part Number GP1M009A090N
Description MOSFET N-CH 900V 9.5A TO3PN
Manufacturer Global Power Technologies Group
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
FET Feature -
Power Dissipation (Max) 312W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3

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