Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSS119 E7796
Part Number | BSS119 E7796 |
Datasheet | BSS119 E7796 datasheet |
Description | MOSFET N-CH 100V 170MA SOT-23 |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |