Home / Products / Integrated Circuits (ICs) / Memory / TC58BYG0S3HBAI6
Part Number | TC58BYG0S3HBAI6 |
Datasheet | TC58BYG0S3HBAI6 datasheet |
Description | IC FLASH 1G PARALLEL 67VFBGA |
Manufacturer | Toshiba Memory America, Inc. |
Series | Benand™ |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND (SLC) |
Memory Size | 1Gb (128M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7V ~ 1.95V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |