Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDMS3669S

Product Introduction

FDMS3669S

Part Number
FDMS3669S
Manufacturer/Brand
ON Semiconductor
Description
MOSFET 2N-CH 30V 13A/18A PWR56
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
PowerTrench®
Quantity
3164pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FDMS3669S
Description MOSFET 2N-CH 30V 13A/18A PWR56
Manufacturer ON Semiconductor
Series PowerTrench®
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 18A
Rds On (Max) @ Id, Vgs 10 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package Power56

Latest Products for Transistors - FETs, MOSFETs - Arrays

APTM10HM05FG

Microsemi Corporation

MOSFET 4N-CH 100V 278A SP6

APTM10AM02FG

Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

APTM100H18FG

Microsemi Corporation

MOSFET 4N-CH 1000V 43A SP6

APTM100AM90FG

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

APTM100A18FTG

Microsemi Corporation

MOSFET 2N-CH 1000V 43A SP4

APTM100A13SG

Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6