Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / S4PJHM3_A/I
Part Number | S4PJHM3_A/I |
Datasheet | S4PJHM3_A/I datasheet |
Description | DIODE GEN PURP 600V 4A TO277A |
Manufacturer | Vishay Semiconductor Diodes Division |
Series | Automotive, AEC-Q101, eSMP® |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 4A |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 4A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 2.5µs |
Current - Reverse Leakage @ Vr | 10µA @ 600V |
Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-277, 3-PowerDFN |
Supplier Device Package | TO-277A (SMPC) |
Operating Temperature - Junction | -55°C ~ 150°C |