Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MURT10060
Part Number | MURT10060 |
Datasheet | MURT10060 datasheet |
Description | DIODE ARRAY GP 600V 100A 3TOWER |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Active |
Diode Configuration | - |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) (per Diode) | 100A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 25µA @ 50V |
Operating Temperature - Junction | -40°C ~ 175°C |
Mounting Type | Chassis Mount |
Package / Case | Three Tower |
Supplier Device Package | Three Tower |