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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA17P10
Part Number | FQA17P10 |
Datasheet | FQA17P10 datasheet |
Description | MOSFET P-CH 100V 18A TO-3P |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |