Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI5415AEDU-T1-GE3
Part Number | SI5415AEDU-T1-GE3 |
Datasheet | SI5415AEDU-T1-GE3 datasheet |
Description | MOSFET P-CH 20V 25A CHIPFET |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 9.6 mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® ChipFet Single |
Package / Case | PowerPAK® ChipFET™ Single |