Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NDD60N900U1T4G
Part Number | NDD60N900U1T4G |
Datasheet | NDD60N900U1T4G datasheet |
Description | MOSFET N-CH 600V 5.9A DPAK-3 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 74W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |