Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSB165N15NZ3GXUMA1

Product Introduction

BSB165N15NZ3GXUMA1

Part Number
BSB165N15NZ3GXUMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 150V 9A WDSON-2
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
1606pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSB165N15NZ3GXUMA1
Datasheet BSB165N15NZ3GXUMA1 datasheet
Description MOSFET N-CH 150V 9A WDSON-2
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 75V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

Latest Products for Transistors - FETs, MOSFETs - Single

IPL60R199CPAUMA1

Infineon Technologies

MOSFET N-CH 650V 16.4A 4VSON

IPL60R299CPAUMA1

Infineon Technologies

MOSFET N-CH 650V 11.1A 4VSON

IPL60R385CPAUMA1

Infineon Technologies

MOSFET N-CH 600V 9A 4VSON

SPW20N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 20.7A TO-247

SPW47N60C3FKSA1

Infineon Technologies

MOSFET N-CH 650V 47A TO-247

IPW60R125C6FKSA1

Infineon Technologies

MOSFET N-CH 600V 30A TO247

Related Products