Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYA20N65C3D1
Part Number | IXYA20N65C3D1 |
Datasheet | IXYA20N65C3D1 datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX3™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 105A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
Power - Max | 200W |
Switching Energy | 430µJ (on), 650µJ (off) |
Input Type | Standard |
Gate Charge | 30nC |
Td (on/off) @ 25°C | 19ns/80ns |
Test Condition | 400V, 20A, 20 Ohm, 15V |
Reverse Recovery Time (trr) | 34ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AA |