Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / BCR133E6327HTSA1
Part Number | BCR133E6327HTSA1 |
Datasheet | BCR133E6327HTSA1 datasheet |
Description | TRANS PREBIAS NPN 200MW SOT23-3 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Last Time Buy |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 130MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 |