Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJ11032G
Part Number | MJ11032G |
Datasheet | MJ11032G datasheet |
Description | TRANS NPN DARL 120V 50A TO3 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 50A |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
Current - Collector Cutoff (Max) | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V |
Power - Max | 300W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AE |
Supplier Device Package | TO-3 |