Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTQ22N60P
Part Number | IXTQ22N60P |
Datasheet | IXTQ22N60P datasheet |
Description | MOSFET N-CH 600V 22A TO-3P |
Manufacturer | IXYS |
Series | PolarHV™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 400W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |