Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FDFM2N111
Part Number | FDFM2N111 |
Datasheet | FDFM2N111 datasheet |
Description | MOSFET N-CH 20V 4A 3X3 MLP |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 273pF @ 10V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 1.7W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MicroFET 3x3mm |
Package / Case | 6-WDFN Exposed Pad |