
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQP120N10-3M8_GE3

| Part Number | SQP120N10-3M8_GE3 |
| Datasheet | SQP120N10-3M8_GE3 datasheet |
| Description | MOSFET N-CH 100V 120A TO220AB |
| Manufacturer | Vishay Siliconix |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7230pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |