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Product Introduction

SIA477EDJT-T1-GE3

Part Number
SIA477EDJT-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 12V 12A SC70-6
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET® Gen III
Quantity
8753pcs Stock Available.

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Product Specifications

Part Number SIA477EDJT-T1-GE3
Datasheet SIA477EDJT-T1-GE3 datasheet
Description MOSFET P-CH 12V 12A SC70-6
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 13 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 6V
FET Feature -
Power Dissipation (Max) 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

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