Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPD02N50C3
Part Number | SPD02N50C3 |
Datasheet | SPD02N50C3 datasheet |
Description | MOSFET N-CH 560V 1.8A DPAK |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |