Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PRMD2Z
Part Number | PRMD2Z |
Datasheet | PRMD2Z datasheet |
Description | PRMD2/SOT1268/DFN1412-6 |
Manufacturer | Nexperia USA Inc. |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 480mW |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1412-6 |