Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FF800R12KE3NOSA1

Product Introduction

FF800R12KE3NOSA1

Part Number
FF800R12KE3NOSA1
Manufacturer/Brand
Infineon Technologies
Description
IGBT MODULE VCES 1200V 800A
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
36pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FF800R12KE3NOSA1
Datasheet FF800R12KE3NOSA1 datasheet
Description IGBT MODULE VCES 1200V 800A
Manufacturer Infineon Technologies
Series -
Part Status Active
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1200A
Power - Max 3900W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 800A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 57nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT150SK170G

Microsemi Corporation

IGBT 1700V 250A 890W SP6

APTGT150SK60T1G

Microsemi Corporation

IGBT 600V 225A 480W SP1

APTGT150TA60PG

Microsemi Corporation

IGBT MODULE TRPL PHASE LEG SP6P

APTGT150TDU60PG

Microsemi Corporation

IGBT MODULE TRPL DUAL SRCE SP6P

APTGT200A120D3G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3

APTGT200A170D3G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3