Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NP36P06SLG-E1-AY
Part Number | NP36P06SLG-E1-AY |
Datasheet | NP36P06SLG-E1-AY datasheet |
Description | MOSFET P-CH 60V 36A TO-252 |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta), 56W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 (MP-3ZK) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |