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Product Introduction

GA10SICP12-263

Part Number
GA10SICP12-263
Manufacturer/Brand
GeneSiC Semiconductor
Description
TRANS SJT 1200V 25A TO263-7
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
18pcs Stock Available.

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Product Specifications

Part Number GA10SICP12-263
Datasheet GA10SICP12-263 datasheet
Description TRANS SJT 1200V 25A TO263-7
Manufacturer GeneSiC Semiconductor
Series -
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 100 mOhm @ 10A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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