Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BS108,126
Part Number | BS108,126 |
Datasheet | BS108,126 datasheet |
Description | MOSFET N-CH 200V 300MA SOT54 |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.8V |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 100mA, 2.8V |
Vgs(th) (Max) @ Id | 1.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |