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Product Introduction
BAS316,H3F
- Part Number
- BAS316,H3F
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- DIODE GEN PURP 100V 250MA USC
- Category
- Diodes - Rectifiers - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 5426pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | BAS316,H3F |
| Description | DIODE GEN PURP 100V 250MA USC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 250mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3ns |
| Current - Reverse Leakage @ Vr | 200nA @ 80V |
| Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Supplier Device Package | USC |
| Operating Temperature - Junction | 150°C (Max) |
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