
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJD5731T4G

| Part Number | MJD5731T4G |
| Datasheet | MJD5731T4G datasheet |
| Description | TRANS PNP 350V 1A DPAK |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
| Power - Max | 1.56W |
| Frequency - Transition | 10MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |