Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / NGTB10N60R2DT4G
Part Number | NGTB10N60R2DT4G |
Datasheet | NGTB10N60R2DT4G datasheet |
Description | IGBT 10A 600V DPAK |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 20A |
Current - Collector Pulsed (Icm) | 40A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 10A |
Power - Max | 72W |
Switching Energy | 412µJ (on), 140µJ (off) |
Input Type | Standard |
Gate Charge | 53nC |
Td (on/off) @ 25°C | 48ns/120ns |
Test Condition | 300V, 10A, 30 Ohm, 15V |
Reverse Recovery Time (trr) | 90ns |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |