IRFH5220TRPBF

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Part Number	IRFH5220TRPBF
Datasheet	IRFH5220TRPBF datasheet
Description	MOSFET N-CH 200V 3.8A PQFN
Manufacturer	Infineon Technologies
Series	HEXFET®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99.9 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1380pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 8.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (5x6)
Package / Case	8-VQFN Exposed Pad