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Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MT3S113(TE85L,F)
Part Number | MT3S113(TE85L,F) |
Datasheet | MT3S113(TE85L,F) datasheet |
Description | RF TRANS NPN 5.3V 12.5GHZ SMINI |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.3V |
Frequency - Transition | 12.5GHz |
Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
Gain | 11.8dB |
Power - Max | 800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |