Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / FGA50N100BNTD2
Part Number | FGA50N100BNTD2 |
Datasheet | FGA50N100BNTD2 datasheet |
Description | IGBT 1000V 50A 156W TO3P |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
IGBT Type | NPT and Trench |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Current - Collector (Ic) (Max) | 50A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
Power - Max | 156W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 257nC |
Td (on/off) @ 25°C | 34ns/243ns |
Test Condition | 600V, 60A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 75ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P |