Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM35GP120GBOSA1

Product Introduction

BSM35GP120GBOSA1

Part Number
BSM35GP120GBOSA1
Manufacturer/Brand
Infineon Technologies
Description
IGBT 2 LOW POWER ECONO3-3
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
9534pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSM35GP120GBOSA1
Description IGBT 2 LOW POWER ECONO3-3
Manufacturer Infineon Technologies
Series -
Part Status Not For New Designs
IGBT Type -
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 45A
Power - Max 230W
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 35A
Current - Collector Cutoff (Max) 500µA
Input Capacitance (Cies) @ Vce 1.5nF @ 25V
Input Three Phase Bridge Rectifier
NTC Thermistor Yes
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT50A120D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

APTGT50A120TG

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG SP4

APTGT50A170D1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG D1

APTGT50A60T1G

Microsemi Corporation

IGBT MOD TRENCH PHASE LEG SP1

APTGT50DA120D1G

Microsemi Corporation

IGBT 1200V 75A 270W D1

APTGT50DA170D1G

Microsemi Corporation

IGBT 1700V 70A 310W D1