Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTX110N20L2
Part Number | IXTX110N20L2 |
Datasheet | IXTX110N20L2 datasheet |
Description | MOSFET N-CH 200V 110A PLUS247 |
Manufacturer | IXYS |
Series | Linear L2™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 500nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 960W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |