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| Part Number | IPB60R600P6ATMA1 | 
| Datasheet | IPB60R600P6ATMA1 datasheet | 
| Description | MOSFET N-CH TO263-3 | 
| Manufacturer | Infineon Technologies | 
| Series | CoolMOS™ P6 | 
| Part Status | Not For New Designs | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 600V | 
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 200µA | 
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 557pF @ 100V | 
| FET Feature | - | 
| Power Dissipation (Max) | 63W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | D²PAK (TO-263AB) | 
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |