Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF6100 |
Datasheet |
IRF6100 datasheet |
Description |
MOSFET P-CH 20V 5.1A FLIP-FET |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
5.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
65 mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
21nC @ 5V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
1230pF @ 15V |
FET Feature |
- |
Power Dissipation (Max) |
2.2W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-FlipFet™ |
Package / Case |
4-FlipFet™ |
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