Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDD306P |
Datasheet |
FDD306P datasheet |
Description |
MOSFET P-CH 12V 6.7A DPAK |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
6.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
28 mOhm @ 6.7A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
21nC @ 4.5V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
1290pF @ 6V |
FET Feature |
- |
Power Dissipation (Max) |
52W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252 |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Latest Products for Transistors - FETs, MOSFETs - Single
ON Semiconductor
MOSFET N-CH 200V 7.8A DPAK
ON Semiconductor
MOSFET P-CH 200V 3.7A DPAK
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
Infineon Technologies
MOSFET N-CH 60V 43A DPAK
Infineon Technologies
MOSFET N-CH 80V 30A DPAK
ON Semiconductor
MOSFET P-CH 40V 8.4A DPAK