Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIA936EDJ-T1-GE3
Part Number | SIA936EDJ-T1-GE3 |
Datasheet | SIA936EDJ-T1-GE3 datasheet |
Description | MOSFET 2N-CH 20V 4.5A SC-70 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |