Product Introduction
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Product Specifications
Part Number |
2SJ304(F) |
Datasheet |
2SJ304(F) datasheet |
Description |
MOSFET P-CH 60V 14A TO220NIS |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
120 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1200pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
40W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220NIS |
Package / Case |
TO-220-3 Full Pack |
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