Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF / A2G35S200-01SR3

Product Introduction

A2G35S200-01SR3

Part Number
A2G35S200-01SR3
Manufacturer/Brand
NXP USA Inc.
Description
AIRFAST RF POWER GAN TRANSISTOR
Category
Transistors - FETs, MOSFETs - RF
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
16pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number A2G35S200-01SR3
Datasheet A2G35S200-01SR3 datasheet
Description AIRFAST RF POWER GAN TRANSISTOR
Manufacturer NXP USA Inc.
Series -
Part Status Active
Transistor Type LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 16.1dB
Voltage - Test 48V
Current Rating -
Noise Figure -
Current - Test 291mA
Power - Output 180W
Voltage - Rated 125V
Package / Case NI-400S-2S
Supplier Device Package NI-400S-2S

Latest Products for Transistors - FETs, MOSFETs - RF

PD85035-E

STMicroelectronics

FET RF 40V 870MHZ

PD20015-E

STMicroelectronics

TRANS RF PWR N-CH POWERSO-10RF

LET9045

STMicroelectronics

TRANSISTOR RF POWER N-CH 80V 9A

PD57070-E

STMicroelectronics

FET RF 65V 945MHZ PWRSO-10

PD20010TR-E

STMicroelectronics

TRANS N-CH 40V POWERSO-10RF FORM

PD54008TR-E

STMicroelectronics

TRANS RF PWR N-CH POWERSO-10RF