Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF / A2G35S200-01SR3
Part Number | A2G35S200-01SR3 |
Datasheet | A2G35S200-01SR3 datasheet |
Description | AIRFAST RF POWER GAN TRANSISTOR |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Active |
Transistor Type | LDMOS |
Frequency | 3.4GHz ~ 3.6GHz |
Gain | 16.1dB |
Voltage - Test | 48V |
Current Rating | - |
Noise Figure | - |
Current - Test | 291mA |
Power - Output | 180W |
Voltage - Rated | 125V |
Package / Case | NI-400S-2S |
Supplier Device Package | NI-400S-2S |